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參數資料
| 型號： | Q67042-S4239 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS2 Power-Transistor |
| 中文描述： | OptiMOS2功率晶體管 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 340K |
| 代理商： | Q67042-S4239 |
BSC094N03S G
Opti
MOS
2 Power-Transistor
Features
Fast switching MOSFET for SMPS
Optimized technology for notebook DC/DC converters
Qualified according to JEDEC
1)
for target applications
N-channel
Logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance
R
DS(on)
Superior thermal resistance
Avalanche rated
Pb-free plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
35
A
T
C
=100 °C
35
T
A
=25 °C,
R
thJA
=45 K/W
2)
14.6
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
140
Avalanche energy, single pulse
E
AS
I
D
=35 A,
R
GS
=25
90
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=40 A,
V
DS
=24 V,
d
i
/d
t
=200 A/μs,
T
j,max
=150 °C
6
kV/μs
Gate source voltage
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
52
W
T
A
=25 °C,
R
thJA
=45 K/W
2)
2.8
Operating and storage temperature
T
j
,
T
stg
-55 ... 150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
Value
V
DS
30
V
R
DS(on),max
9.4
m
I
D
35
A
Product Summary
Type
Package
Ordering Code
Marking
BSC094N03S G
P-TDSON-8
Q67042 S4291
094N03S
P-TDSON-8
Rev. 1.01
page 1
2004-12-15
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