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參數資料
| 型號： | Q67060-S6101-A3 |
| 廠商： | SIEMENS AG |
| 英文描述： | Smart Highside Power Switch |
| 中文描述： | 智能阻抗高側電源開關 |
| 文件頁數： | 8/14頁 |
| 文件大?。?/td> | 182K |
| 代理商： | Q67060-S6101-A3 |
BTS 410 D2
Semiconductor Group
8
V
bb
disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
V
bb
disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
Vbb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
E
bb
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
EAS
L
R
ELoad
L
R
L
{
Z
L
Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
∫
V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for R
L
>
0
:
E
AS
= I
L
·
L
2
·
R
L
·
(
V
bb
+
|V
OUT(CL)
|)
·
ln
(1+
Maximum allowable load inductance for
a single switch off
L = f (I
L
);
T
j,start
=
150°C,T
C
=
150°C const.,
V
bb
=
12
V, R
L
=
0
L [mH]
10000
I
L
·
R
L
|V
OUT(CL)
| )
1
10
100
1000
1
2
3
4
5
6
IL [A]
Typ. transient thermal impedance chip case
Z
thJC
= f(t
p
, D), D=t
p
/T
Z
thJC
[K/W]
10
0.01
0.1
1
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
tp [s]
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| Q67060-S6101-A4 | Smart Highside Power Switch |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67060-S6101-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6103-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6103-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6103-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6108-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
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