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參數資料
| 型號： | Q67060-S6103-A3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Smart Highside Power Switch |
| 中文描述： | 智能阻抗高側電源開關 |
| 文件頁數： | 6/15頁 |
| 文件大小： | 318K |
| 代理商： | Q67060-S6103-A3 |
BTS 410 F2
Semiconductor Group
6
2003-Oct-01
Truth Table
Input-
Output
Status
level
level
412
B2
H
H
L
H
H
L
L
H
L
L
L
15)
L
15)
L
L
410
D2
H
H
H
L
H
L
H
H (L
L
L
L
L
15)
L
L
410
E2
/F2
H
H
H
L
H
L
H
H (L
14)
)
L
L
H
H
H
H
410
G2
H
H
H
L
H
H
H
H (L
14)
)
L
L
H
H
H
H
410
H2
H
H
L
H
H
L
L
H
L
L
H
H
H
H
Normal
operation
Open load
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
13
)
H
L
L
H
H
L
L
L
L
L
L
Short circuit
to GND
Short circuit
to V
bb
Overtem-
perature
Under-
voltage
Overvoltage
14
)
)
15
)
L = "Low" Level
H = "High" Level
X = don't care
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
Z = high impedance, potential depends on external circuit
13
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
14
) Low resistance short
V
to output may be detected in ON-state by the no-load-detection
15
) No current sink capability during undervoltage shutdown
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
VIN
IST
IIN
Vbb
Ibb
IL
VOUT
IGND
VON
1
2
4
3
5
RGND
Input circuit (ESD protection)
IN
GND
I
R
ZD
ZD
I
I1
I2
ESD-
ZD
I1
6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67060-S6103-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6108-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6108-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6108-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6109-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
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