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參數(shù)資料
型號: Q67060-S6206-A4
廠商: INFINEON TECHNOLOGIES AG
英文描述: Smart Highside Power Switch
中文描述: 智能阻抗高側(cè)電源開關(guān)
文件頁數(shù): 1/14頁
文件大小: 284K
代理商: Q67060-S6206-A4
PROFET BTS 442 E2
Semiconductor Group
1 of 14
2003-Oct-01
Smart Highside Power Switch
Features
Overload protection
Current limitation
Short-circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of
V
bb
protection
2)
E
lectro
s
tatic
d
ischarge (
ESD
) protection
Application
μ
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
Rbb
1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
V
bb(AZ)
V
bb(on)
4.5 ... 42 V
R
ON
I
L(ISO)
I
L(SCr)
63
V
18 m
21
70
A
A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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