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參數資料
| 型號： | Q67060-S6310 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Smart Highside High Current Power Switch |
| 中文描述： | 智能阻抗高側大電流電源開關 |
| 文件頁數： | 7/19頁 |
| 文件大小： | 461K |
| 代理商： | Q67060-S6310 |
2004-01-27
Page 7
BTS 4141D
EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test.
Test Conditions:
If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.
Supply voltage:
V
bb = 13.5V Temperature:
T
a = 23
±
5°C ;
Load:
R
L = 220
Operation mode: PWM Frequency: 100Hz / Duty Cycle: 50%
DC On/Off
DUT-Specific.:
R
GND
Fast electrical transients
Acc. ISO 7637
Test Pulse
Test Level
Test Results
On
C
C
C
C
C
E (70V)
Pulse Cycle Time and
Generator Impedance
500ms ; 10
500ms ; 10
100ms ; 50
100ms ; 50
0,01
400ms ; 2
Off
C
C
C
C
C
1
2
-200 V
+200 V
-200 V
+ 200 V
-7 V
175 V
3a
3b
4
1)
5
E (70V)
The test pulses are applied at
V
bb
Definition of functional status
Class
C
E
Content
All functions of the device are performed as designed after exposure to disturbance.
One or more function of a device does not perform as designed after exposure
and can not be returned to proper operation without repairing or replacing the
device. The value after the character shows the limit.
Test circuit:
PROFET
V
OUT
IN
bb
R
L
Pulse
Bat.
R
GND
GND
1Supply voltage
V
bb = 12 V instead of 13,5 V.
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| Q67060-S6101-A4 | Smart Highside Power Switch |
| Q67060-S6103-A2 | Smart Highside Power Switch |
| Q67060-S6103-A3 | Smart Highside Power Switch |
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| Q67060-S6500-A2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HITFET |
| Q67060-S6501-A2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HITFET |
| Q67060-S6502-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch |
| Q67060-S6502-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch |
| Q67060-S6503-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch |
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