欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào)： Q67100-Q1337
廠商： SIEMENS AG
英文描述： 16 MBit Synchronous DRAM
中文描述： 16兆位同步DRAM
文件頁(yè)數(shù)： 12/53頁(yè)
文件大?。?/td> 418K
代理商： Q67100-Q1337
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
12
12.99
terminate once the burst length has been reached. In other words, unlike burst length of 2, 3 or 8,
full page burst continues until it is terminated using another command.
Similar to the page mode of conventional DRAM’s, burst read or write accesses on any column
address are possible once the RAS cycle latches the sense amplifiers. The maximum
t
RAS
or the
refresh interval time limits the number of random column accesses. A new burst access can be
done even before the previous burst ends. The interrupt operation at every clock cycle is supported.
When the previous burst is interrupted, the remaining addresses are overridden by the new address
with the full burst length. An interrupt which accompanies an operation change from a read to a write
is possible by exploiting DQM to avoid bus contention.
When two or more banks are activated sequentially, interleaved bank read or write operations are
possible. With the programmed burst length, alternate access and precharge operations on two or
more banks can realize fast serial data access modes among many different pages. Once two or
more banks are activated, column to column interleave operation can be done between different
pages.
Refresh Mode
SDRAM has two refresh modes, Auto Refresh and Self Refresh. Auto Refresh is similar to the CAS
-before-RAS refresh of conventional DRAMs. All of banks must be precharged before applying any
refresh mode. An on-chip address counter increments the word and the bank addresses and no
bank information is required for both refresh modes.
The chip enters the Auto Refresh mode, when RAS and CAS are held low and CKE and WE are
held high at a clock timing. The mode restores word line after the refresh and no external precharge
Burst Length and Sequence
Burst
Length
Starting
Address
(A2 A1 A0)
Sequential Burst Addressing
(decimal)
Interleave Burst
Addressing
(decimal)
2
xx0
xx1
0, 1
1, 0
0, 1
1, 0
4
x00
x01
x10
x11
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
8
000
001
010
011
100
101
110
111
0 1 2 3 4 5 6 7
1 2 3 4 5 6 7 0
2 3 4 5 6 7 0 1
3 4 5 6 7 0 1 2
4 5 6 7 0 1 2 3
5 6 7 0 1 2 3 4
6 7 0 1 2 3 4 5
7 0 1 2 3 4 5 6
0 1 2 3 4 5 6 7
1 0 3 2 5 4 7 6
2 3 0 1 6 7 4 5
3 2 1 0 7 6 5 4
4 5 6 7 0 1 2 3
5 4 7 6 1 0 3 2
6 7 4 5 2 3 0 1
7 6 5 4 3 2 1 0
Full Page
(optional)
nnn
Cn, Cn+1, Cn+2,.....
not supported
相關(guān)PDF資料
PDF描述
Q67100-Q2001 8M x 32-Bit Dynamic RAM Module
Q67100-Q2002 1M x 64-Bit Dynamic RAM Module
Q67100-Q2003 1M x 64-Bit Dynamic RAM Module
Q67100-Q2004 1M x 72-Bit Dynamic RAM Module
Q67100-Q2005 4M x 32-Bit Dynamic RAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q1838 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM
Q67100-Q1841 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM
Q67100-Q1844 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM
Q67100-Q2001 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 32-Bit Dynamic RAM Module
Q67100-Q2002 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*
主站蜘蛛池模板： 石屏县| 南乐县| 那坡县| 宁城县| 祁连县| 石狮市| 喀什市| 棋牌| 辽阳县| 孟州市| 禹城市| 登封市| 金溪县| 建瓯市| 洮南市| 灵石县| 伽师县| 三门县| 永德县| 德兴市| 巴塘县| 益阳市| 梁山县| 县级市| 巩义市| 额敏县| 宁波市| 达孜县| 瓦房店市| 札达县| 竹北市| 舞钢市| 梁平县| 岐山县| 门头沟区| 武川县| 买车| 韩城市| 阿尔山市| 平陆县| 镇安县|