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參數(shù)資料

HYB 39S64400/800/160BT(L)

64-MBit Synchronous DRAM

Data Book

12.99

Burst Termination

Once a burst read or write operation has been initiated, there are several methods in which to

terminate the burst operation prematurely. These methods include using another Read or Write

Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst

cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst

operation but leave the bank open for future Read or Write Commands to the same page of the

active bank. When interrupting a burst with another Read or Write Command care must be taken to

avoid DQ contention. The Burst Stop Command, however, has the fewest restrictions making it the

easiest method to use when terminating a burst operation before it has been completed. If a Burst

Stop command is issued during a burst write operation, then any residual data from the burst write

cycle will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is

registered will be written to the memory.

A10

BA0

BA1

Bank 0

Bank 1

Bank 2

Bank 3

all Banks

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
Q67100-Q2016	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2017	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2018	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2019	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2021	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit Dynamic RAM

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