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參數資料
型號: Q67100-Q2068
廠商: SIEMENS AG
英文描述: 2M x 32-Bit Dynamic RAM Module
中文描述: 200萬× 32位動態隨機存儲器模塊
文件頁數: 15/53頁
文件大小: 418K
代理商: Q67100-Q2068
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
15
12.99
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70
°
C
Storage Temperature Range..................................................................................
– 55 to + 150
°
C
Input/Output Voltage......................................................................................... – 0.3 to
V
DD
+ 0.3 V
Power Supply Voltage
V
DD
/
V
DDQ
.............................................................................. – 0.3 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data Out Current (short circuit)............................................................................................... 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
SS
2.
V
IH
may overshoot to
V
DD
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input Low Voltage
Output High Voltage (
I
OUT
= – 4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
– 0.3
V
1, 2
2.4
V
0.4
V
μ
A
– 5
5
I
O(L)
– 5
5
μ
A
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
2.5
3.5
pF
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input/Output Capacitance (DQ)
C
IO
4.0
6.0
pF
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相關代理商/技術參數
參數描述
Q67100-Q2069 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2072 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM
Q67100-Q2073 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM
Q67100-Q2075 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 72-Bit Dynamic RAM Module
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