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參數(shù)資料
型號(hào)： Q67100-Q527
廠商： SIEMENS AG
英文描述： 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM
中文描述： 1個(gè)M × 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器的低功耗1個(gè)Mⅴ1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù)： 9/53頁(yè)
文件大小： 418K
代理商： Q67100-Q527
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
9
12.99
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the truth table for the operation commands.
Notes
1.
V = Valid, x = Don’t Care, L = Low Level, H = High Level
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock
before the commands are provided.
3. This is the state of the banks designated by BA0, BA1 signals.
4. Device state is Full Page Burst operation
5. Power Down Mode can not entry in the burst cycle. When this command assert in the burst mode
cycle device is clock suspend mode.
Operation
Device
State
Idle
3
Active
3
Active
3
CKE
n-1
CKE
n
CS
RAS
CAS
WE
DQM A0-9,
A11
A10
BA0
BA1
Row Activate (ACT)
H
X
L
L
H
H
X
V
V
V
Read (READ)
H
X
L
H
L
H
X
V
L
V
Read w/ Autoprecharge
(READA)
H
X
L
H
L
H
X
V
H
V
Write (WRITE)
Active
3
Active
3
H
X
L
H
L
L
X
V
L
V
Write w/ Autoprecharge
(WRITEA)
H
X
L
H
L
L
X
V
H
V
Row Precharge (PRE)
Any
H
X
L
L
H
L
X
X
L
V
Precharge All (PREA)
Any
H
X
L
L
H
L
X
X
H
X
Mode Register Set (MRS)
Idle
H
X
L
L
L
L
X
V
V
V
No Operation (NOP)
Any
H
X
L
H
H
H
X
X
X
X
Device Deselect (INHBT)
Any
H
X
H
X
X
X
X
X
X
X
Auto Refresh (REFA)
Idle
H
H
L
L
L
H
X
X
X
X
Self Refresh Entry (REFS-EN) Idle
H
L
L
L
L
H
X
X
X
X
Self Refresh Exit (REFS-EX)
Idle
(Self
Refr.)
L
H
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Entry (PDN-EN) Idle
Active
5
H
L
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Exit (PDN-EX)
Any
(Power
Down)
L
H
H
X
X
X
X
X
X
X
L
H
H
L
Data Write/Output Enable
Active
H
X
X
X
X
X
L
X
X
X
Data Write/Output Disable
Active
H
X
X
X
X
X
H
X
X
X
相關(guān)PDF資料
PDF描述
Q67100-Q530 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q536 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q537 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q542 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q543 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q530 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q536 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q537 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q542 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q543 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
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