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參數(shù)資料
| 型號(hào)： | QCA200AA120 |
| 廠商： | Sanrex Corporation |
| 英文描述： | TRNASISTOR MODULE |
| 中文描述： | TRNASISTOR模塊 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 108K |
| 代理商： | QCA200AA120 |
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200AA100
TRANSISTOR MODULE
UL;E76102 M
QCA200AA100
is a dual Darlington power transistor module with has series-connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction.
I
C
=200A, V
CEX
=1000V
Low saturation voltage for higher efficiency
High DC current gain h
FE
Isolated monuting base
Applications
Motor Control
Switching Power Supply, Ultrasonic Application
VVVF , AC
/
DC Servo, UPS,
Maximum Ratings
Tj
25
unless otherwise specified
Ratings
QCA200AA100
1000
1000
1000
10
200
200
10
1560
40 to 150
40 to 125
2500
Electrical Characteristics
Symbol
Item
Conditions
Unit
V
CBO
V
CEX
V
CEX SUS
V
EBO
I
C
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Sustaning Voltage
Emitterr-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Collector-Emitter power dissipation
J unction Temperature
Storage Temperature
Isolation Voltage(RMS)
Emitter open
V
BE
I
C
40A
Collector open
V
V
V
V
A
A
A
W
2V
I
B2
5A
I
C
I
B
P
C
T
j
Tstg
V
ISO
T
C
25
A.C. 1minute
V
Mounting Torque
M6
Recommended Value 2.5
-
3.9
25
-
40
4.7
48
N m
f
B
)
(
Mass
Typical Value
675
g
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max
4.00
500
75
2.5
3.5
3.0
15.0
3.0
1.8
0.08
0.35
Unit
I
CBO
I
EBO
Collector Cut-off Current
Emitter Cut-off Current
V
CB
V
EB
Ic
Ic
Ic
Ic
1000V
10V
200A
200A
200A
200A
Emitter open
Collector open
V
CE
2.8V
V
CE
5V
I
B
4A
I
B
4A
mA
mA
h
FE
D.C. Current Gain
100
V
CE(sat)
V
BE(sat)
ton
tstg
tf
Collector-Emitter Sturation Voltage
Base-Emitter Saturation Voltage
V
V
s
V
/
W
On Time
Storage Time
Fall Tjme
Vcc
I
B1
600V
4A
Ic
200A
4A
I
B2
Ic
200A
Transistor part
Diode part
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
(Diode forward voltage drop)
Thermal Impedance
(J unction to case)
SanRex
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