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參數資料
型號: QEC112
廠商: QT OPTOELECTRONICS
元件分類: 紅外LED
英文描述: GAAS INFRARED EMITTING DIODE
中文描述: 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
文件頁數: 3/4頁
文件大小: 134K
代理商: QEC112
Fig.1 Normalized Radiant Intensity vs. Forward Current
I
F
- FORWARD CURRENT (mA)
LENS TIP SEPARATION (INCHES)
1
10
100
1000
I
e
V
F
0.001
0.01
0.1
1
10
Normalized to:
I
F
= 100 mA Pulsed
t
= 100 μs
Duty Cycle = 0.1 %
T
A
= 25C
Fig.2 Coupling Characteristics of QEC11X And QSC11X
0
1
2
3
4
5
6
7
8
I
C
0.0
0.2
0.4
0.6
0.8
1.0
Normalized to:
d = 0
I
F
Pulsed
t
= 100 μs
Duty Cycle = 0.1 %
V
CC
= 5 V
R
L
= 100
T
A
= 25C
I
F
= 100 mA
I
F
= 20 mA
Fig.3 Forward Voltage vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (C)
-40
-20
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
Normalized to:
I
F
Pulsed
t
= 100 μs
Duty Cycle = 0.1 %
I
F
= 100 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 20 mA
Fig. 5
Radiation Diagram
0.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Fig. 4 Normalized Intensity vs. Wavelength
λ
(nm)
875
900
925
950
975
1000
1025
N
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
QEC112
QEC113
PLASTIC INFRARED
LIGHT EMITTING DIODE
TYPICAL PERFORMANCE CURVES
DS300334
5/21/01
3 OF 4
www.fairchildsemi.com
相關PDF資料
PDF描述
QEC113 GAAS INFRARED EMITTING DIODE
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QEC122 PLASTIC INFRARED LIGHT EMITTING DIODE
QEC123 PLASTIC INFRARED LIGHT EMITTING DIODE
QEC121 AIGAAS INFRARED EMITTING DIODE
相關代理商/技術參數
參數描述
QEC112_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Infrared Light Emitting Diode
QEC112_Q 功能描述:紅外發射源 LED.LOW BIN QEC113 RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
QEC113 功能描述:紅外發射源 0.07mW 1.5V IR LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
QEC113 制造商:Fairchild Semiconductor Corporation 功能描述:INFRARED LED ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:IR EMITTER, 940NM, T-1, THROUGH HOLE
QEC113_Q 功能描述:紅外發射源 0.07mW 1.5V IR LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
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