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參數資料
| 型號： | QEC113 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 紅外LED |
| 英文描述： | PLASTIC INFRARED LIGHT EMITTING DIODE |
| 中文描述： | 2.95 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 134K |
| 代理商： | QEC113 |
Fig.1 Normalized Radiant Intensity vs. Forward Current
I
F
- FORWARD CURRENT (mA)
LENS TIP SEPARATION (INCHES)
1
10
100
1000
I
e
V
F
0.001
0.01
0.1
1
10
Normalized to:
I
F
= 100 mA Pulsed
t
= 100 μs
Duty Cycle = 0.1 %
T
A
= 25C
Fig.2 Coupling Characteristics of QEC11X And QSC11X
0
1
2
3
4
5
6
7
8
I
C
0.0
0.2
0.4
0.6
0.8
1.0
Normalized to:
d = 0
I
F
Pulsed
t
= 100 μs
Duty Cycle = 0.1 %
V
CC
= 5 V
R
L
= 100
T
A
= 25C
I
F
= 100 mA
I
F
= 20 mA
Fig.3 Forward Voltage vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (C)
-40
-20
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
Normalized to:
I
F
Pulsed
t
= 100 μs
Duty Cycle = 0.1 %
I
F
= 100 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 20 mA
Fig. 5
Radiation Diagram
0.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Fig. 4 Normalized Intensity vs. Wavelength
λ
(nm)
875
900
925
950
975
1000
1025
N
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
QEC112
QEC113
PLASTIC INFRARED
LIGHT EMITTING DIODE
TYPICAL PERFORMANCE CURVES
DS300334
5/21/01
3 OF 4
www.fairchildsemi.com
相關PDF資料 |
PDF描述 |
|---|---|
| QEC112 | GAAS INFRARED EMITTING DIODE |
| QEC113 | GAAS INFRARED EMITTING DIODE |
| QEC121 | PLASTIC INFRARED LIGHT EMITTING DIODE |
| QEC122 | PLASTIC INFRARED LIGHT EMITTING DIODE |
| QEC123 | PLASTIC INFRARED LIGHT EMITTING DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| QEC113 | 制造商:Fairchild Semiconductor Corporation 功能描述:INFRARED LED ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:IR EMITTER, 940NM, T-1, THROUGH HOLE |
| QEC113_Q | 功能描述:紅外發射源 0.07mW 1.5V IR LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QEC113C6R0 | 功能描述:紅外發射源 Gaas infr Emitting RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QEC113C6R0_Q | 功能描述:紅外發射源 Gaas infr Emitting RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QEC121 | 功能描述:紅外發射源 T1 A1GaAS LED 27mW RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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