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參數資料
| 型號： | QED121 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 紅外LED |
| 英文描述： | PLASTIC INFRARED LIGHT EMITTING DIODE |
| 中文描述： | 5 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件頁數： | 1/3頁 |
| 文件大小： | 358K |
| 代理商： | QED121 |
0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
1. Derate power dissipation linearly 2.67
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron
1/16”
(1.6mm) minimum
from housing.
PACKAGE DIMENSIONS
FEATURES
D
= 880 nm
Chip material = AlGaAs
Package type: T-1 3/4 (5mm lens diameter)
Matched Photosensor: QSD122/123/124
Narrow Emission Angle, 18°
High Output Power
Package material and color: Clear, peach tinted, plastic
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
100
5
200
Unit
°C
°C
°C
°C
mA
V
mW
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
ANODE
CATHODE
SCHEMATIC
PARAMETER
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QED121
Radiant Intensity QED122
Radiant Intensity QED123
Rise Time
Fall Time
TEST CONDITIONS
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA, tp = 20 ms
V
R
= 5 V
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
SYMBOL
MIN
—
—
—
—
16
32
50
—
—
TYP
880
±9
—
—
—
—
—
800
800
MAX
—
—
1.7
10
40
100
—
—
—
UNITS
nm
Deg.
D
PE
0
V
F
I
R
I
E
I
E
I
E
t
r
t
f
V
μA
mW/sr
mW/sr
mW/sr
I
F
= 100 mA
ns
ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25
°
C)
QED121/122/123
PLASTIC INFRARED
LIGHT EMITTING DIODE
2001 Fairchild Semiconductor Corporation
DS300336
4/19/01
1 OF 3
www.fairchildsemi.com
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PDF描述 |
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| QED122 | PLASTIC INFRARED LIGHT EMITTING DIODE |
| QED123 | PLASTIC INFRARED LIGHT EMITTING DIODE |
| QED221 | PLASTIC INFRARED LIGHT EMITTING DIODE |
| QED222 | PLASTIC INFRARED LIGHT EMITTING DIODE |
| QED223 | PLASTIC INFRARED LIGHT EMITTING DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| QED121_Q | 功能描述:紅外發射源 T13-4 ALGAAS LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QED121A4R0 | 功能描述:紅外發射源 T13-4 ALGAAS LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QED122 | 功能描述:紅外發射源 T13-4 ALGAAS LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QED122_Q | 功能描述:紅外發射源 T13-4 ALGAAS LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QED122A3R0 | 功能描述:紅外發射源 infrared Lt Emitting Plastic RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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