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參數資料
型號: QED122.A3R0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 紅外LED
英文描述: 5 mm, 1 ELEMENT, INFRARED LED, 880 nm
封裝: PLASTIC PACKAGE-2
文件頁數: 1/5頁
文件大?。?/td> 147K
代理商: QED122.A3R0
0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
1. Derate power dissipation linearly 2.67
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron
1/16”
(1.6mm) minimum
from housing.
PACKAGE DIMENSIONS
FEATURES
D
= 880 nm
Chip material = AlGaAs
Package type: T-1 3/4 (5mm lens diameter)
Matched Photosensor: QSD122/123/124
Narrow Emission Angle, 18°
High Output Power
Package material and color: Clear, peach tinted, plastic
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
100
5
200
Unit
°C
°C
°C
°C
mA
V
mW
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
ANODE
CATHODE
SCHEMATIC
PARAMETER
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QED121
Radiant Intensity QED122
Radiant Intensity QED123
Rise Time
Fall Time
TEST CONDITIONS
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA, tp = 20 ms
V
R
= 5 V
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
SYMBOL
MIN
16
32
50
TYP
880
±9
800
800
MAX
1.7
10
40
100
UNITS
nm
Deg.
D
PE
0
V
F
I
R
I
E
I
E
I
E
t
r
t
f
V
μA
mW/sr
mW/sr
mW/sr
I
F
= 100 mA
ns
ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25
°
C)
QED121/122/123
PLASTIC INFRARED
LIGHT EMITTING DIODE
2001 Fairchild Semiconductor Corporation
DS300336
4/19/01
1 OF 3
www.fairchildsemi.com
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