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參數(shù)資料
| 型號： | QED234 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 紅外LED |
| 英文描述： | GAAS INFRARED EMITTING DIODE |
| 中文描述： | 4.9 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 84K |
| 代理商： | QED234 |
1. Derate power dissipation linearly 2.67 mW/
°
C above 25
°
C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16
”
(1.6mm) minimum from housing.
5. Pulse conditions; tp = 100 μs, T = 10 ms.
PARAMETER
TEST CONDITIONS
DEVICE
SYMBOL
MIN
TYP
MAX
UNITS
Peak Emission Wavelength
I
F
= 20 mA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
ALL
D
PE
—
—
940
—
nm
Spectral Bandwidth
ALL
50
—
nm
Temp. Coefficient of
D
PE
Emission Angle
ALL
TC
D
2
0
1/2
V
F
TC
V
I
R
—
0.2
—
nm/K
ALL
—
40
—
Deg.
Forward Voltage
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA
V
R
= 5 V
ALL
—
—
1.6
V
Temp. Coefficient of V
F
Reverse Current
ALL
—
-1.5
—
mV/K
ALL
—
—
10
μA
Radiant Intensity
I
F
= 100 mA, tp = 20 ms
QED233
I
E
10
—
50
mW/sr
QED234
27
—
—
Temp. Coefficient of I
E
Rise Time
I
F
= 20 mA
ALL
TC
I
t
r
t
f
—
-0.6
—
%/K
I
F
= 100 mA
ALL
—
1000
—
ns
Fall Time
ALL
—
1000
—
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25
°
C)
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
I
FP
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
100
5
200
1.5
Unit
°
C
°
C
°
C
°
C
mA
V
mW
A
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
Peak Forward Current
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise specified)
QED233
QED234
PLASTIC INFRARED
LIGHT EMITTING DIODE
www.fairchildsemi.com
2 OF 4
10/31/01 DS300338
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