- 您現在的位置：買賣IC網 > PDF目錄361261 > QEE113 (QT OPTOELECTRONICS) GAAS INFRARED EMITTING DIODE PDF資料下載
參數資料
| 型號： | QEE113 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 紅外LED |
| 英文描述： | GAAS INFRARED EMITTING DIODE |
| 中文描述： | 1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件頁數： | 3/4頁 |
| 文件大小： | 332K |
| 代理商： | QEE113 |
4/30/02
Page 3 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE113
Fig.1 Normalized Radiant Intensity vs. Forward Current
I
F
- FORWARD CURRENT (mA)
LENS TIP SEPARATION (INCHES)
1
10
100
1000
I
e
V
F
0.001
0.01
0.1
1
10
Fig.2 Coupling Characteristics of QEE113 And QSE113
0
1
2
3
4
5
6
I
C
0.0
0.2
0.4
0.6
0.8
1.0
I
F
= 20 mA
Fig.3 Forward Voltage vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
C)
-40
-20
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
Normalized to:
I
F
Pulsed
t
= 100
μ
s
Duty Cycle = 0.1 %
I
F
= 100 mA
I
F
= 10 mA
I
F
= 50 mA
Fig. 5
Radiation Diagram
0.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Fig. 4 Normalized Intensity vs. Wavelength
λ
(nm)
875
900
925
950
975
1000
1025
N
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Normalized to:
I
F
= 100 mA Pulsed
t
= 100
μ
s
Duty Cycle = 0.1 %
T
A
= 25
C
I
F
= 100 mA
Normalized to:
d = 0
I
F
Pulsed
t
= 100
μ
s
Duty Cycle = 0.1 %
V
CC
= 5 V
R
L
= 100
T
A
= 25
C
I
F
= 20 mA
相關PDF資料 |
PDF描述 |
|---|---|
| QEE122 | PLASTIC INFRARED LIGHT EMITTING DIODE |
| QEE123 | PLASTIC INFRARED LIGHT EMITTING DIODE |
| QEE122 | AIGAAS INFRARED EMITTING DIODE |
| QEE123 | AIGAAS INFRARED EMITTING DIODE |
| QEE213 | PLASTIC INFRARED LIGHT EMITTING DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| QEE113 | 制造商:Fairchild Semiconductor Corporation 功能描述:IR Emitting Diode |
| QEE113 | 制造商:UNBRANDED 功能描述:IR EMITTER 940NM |
| QEE113_Q | 功能描述:紅外發射源 0.015mW 1.5V IR LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QEE113E3R0 | 功能描述:紅外發射源 infrared Lt Emitting Plastic RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QEE122 | 功能描述:紅外發射源 INFRARED DIODE RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
發布緊急采購，3分鐘左右您將得到回復。