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參數資料
| 型號： | QF20AA60 |
| 廠商： | Sanrex Corporation |
| 英文描述： | TRANSISTOR MODULE (THREE PHASES BRIDGE TYPE) |
| 中文描述： | 晶體管模塊（三相橋型） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 503K |
| 代理商： | QF20AA60 |
61
QF20AA40/60
TRANSISTOR MODULE
THREE PHASES BRIDGE TYPE
Maximum Ratings
Tj
25
Electrical Characteristics
Tj
25
Symbol
Item
Conditions
Ratings
QF20AA40 QF20AA60
400
400
Unit
V
CBO
V
CEX
V
EBO
I
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
600
600
V
V
V
A
A
A
W
V
BE
2V
10
40
20
2
160
=pw
1ms
20
I
C
I
B
P
T
T
j
Tstg
V
ISO
T
C
25
40
40
150
125
A.C.1minute
2500
V
Mounting Torque
M5
Recommended Value 1.5
2.5
15
25
2.7
28
N m
f
B
g
Mass
Typical Value
95
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
1.0
200
75
100
2.0
2.5
1.0
12.0
2.0
1.6
0.8
2.2
Unit
I
CBO
I
EBO
Collector Cut-off Current
Emitter Cut-off Current
V
CB
V
EB
V
CBO
V
EBO
mA
mA
300
450
400
600
V
CEO SUS
Collector Emitter
Sustaning Voltage
QF20AA40
QF20AA60
QF20AA40
QF20AA60
Ic
1A
V
V
CEX SUS
Ic
4A
I
B2
1A
V
h
FE
DC Current Gain
Ic
Ic
Ic
Ic
20A
20A
20A
20A
V
CE
V
CE
I
B
I
B
2V
5V
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.27A
0.27A
V
V
s
V
/
W
On Time
Storage Time
Fall Time
Transistor part
Diode part
Vcc
I
B1
300V
0.5A
Ic
20A
0.5A
I
B2
Ic
20A
Rth(j-c)
Switching
Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
QF20AA
is six pack Darlington power transistor module which has six transistors
connected in three phase bridge configuraction. Each transistor has a reverse paralleled
fast recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
I
C
20A, V
CEX
400
/
600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control
VVVF , AC Servo, UPS
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