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參數(shù)資料
| 型號： | QSC112 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 光敏三極管 |
| 英文描述： | PLASTIC SILICON PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 105K |
| 代理商： | QSC112 |
0.030 (0.76)
NOM
0.116 (2.95)
0.193 (4.90)
0.800 (20.3)
MIN
0.050 (1.27)
0.100 (2.54)
NOM
0.018 (0.46)
SQ. (2X)
0.155 (3.94)
EMITTER
0.052 (1.32)
0.032 (0.082)
REFERENCE
SURFACE
PACKAGE DIMENSIONS
FEATURES
Tight production distribution.
Steel lead frames for improved reliability in solder mounting.
Good optical-to-mechanical alignment.
Plastic package is infrared transparent black to attenuate visible light.
Mechanically and spectrally matched to the QECXXX LED.
Black plastic body allows easy recognition from LED.
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
EMITTER
COLLECTOR
SCHEMATIC
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSC112
QSC113
QSC114
2001 Fairchild Semiconductor Corporation
DS300358
7/09/01
1 OF 4
www.fairchildsemi.com
DESCRIPTION
The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QSC113 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSC114 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSC133 | PLASTIC SILICON PHOTODARLINGTON |
| QSD124 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| QSD122 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSC112_0056K | 制造商:Fairchild Semiconductor Corporation 功能描述:PHOTOTRANSISTOR IR CHIP PLASTIC SILICON NPN TRANSISTOR 880NM - Bulk |
| QSC112_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Infrared Phototransistor |
| QSC112_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Infrared Phototransistor |
| QSC112CC6R0 | 功能描述:光電晶體管 DETECTOR IR-Si T1 16DEG 24.5MM LEADS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSC113 | 功能描述:光電晶體管 2.4mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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