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參數資料
型號: LBC848C
廠商: 樂山無線電股份有限公司
英文描述: General Purpose Transistors NPN Silicon
中文描述: 通用晶體管NPN硅
文件頁數: 1/6頁
文件大?。?/td> 141K
代理商: LBC848C
LESHAN RADIO COMPANY, LTD.
LBC846ALT1S-1/6
General Purpose Transistors
3
xx
MARKING DIAGRAM
xx= Device Marking
(See Table Below)
LBC846ALT1
Series
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
Pb-Free Packages are Available
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2
EMITTER
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
L
BC846
L
BC847,
L
BC850
L
BC848,
L
BC849
VCEO
65
45
30
Vdc
Collector–Base Voltage
L
BC846
L
BC847,
L
BC850
L
BC848,
L
BC849
VCBO
80
50
30
Vdc
Emitter–Base Voltage
L
BC846
L
BC847,
L
BC850
L
BC848,
L
BC849
VEBO
6.0
6.0
5.0
Vdc
Collector Current – Continuous
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient (Note 1.)
RJA
556
°
C/W
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25
°
C
Derate above 25
°
C
PD
300
2.4
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient (Note 2.)
RJA
417
°
C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to
+150
°
C
1
3
2
SOT–23
相關PDF資料
PDF描述
LBC848CLT1 General Purpose Transistors NPN Silicon
LBC848CLT1G General Purpose Transistors NPN Silicon
LBC849 General Purpose Transistors NPN Silicon
LBC849B General Purpose Transistors NPN Silicon
LBC849BLT1 General Purpose Transistors NPN Silicon
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參數描述
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