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參數(shù)資料
| 型號(hào)： | R0809LS10D |
| 廠商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | 1691 A, 1000 V, SCR |
| 封裝： | 101A336, 3 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 259K |
| 代理商： | R0809LS10D |
Data Sheet. Type R0809LS10x Issue 1
Page 1 of 12
March, 2001
WESTCODE Date:-30Mar,2001
Data Sheet Issue:- 1
Distributed Gate Thyristor
Type R0809LS10x
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
1000
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
1000
V
VRRM
Repetitive peak reverse voltage, (note 1)
1000
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
1100
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
IT(AV)
Mean on-state current, Tsink=55°C, (note 2)
809
A
IT(AV)
Mean on-state current. Tsink=85°C, (note 2)
504
A
IT(AV)
Mean on-state current. Tsink=85°C, (note 3)
271
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C, (note 2)
1691
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
1260
A
ITSM
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
8000
A
ITSM2
Peak non-repetitive surge tp=10ms, VRM
≤10V, (note 5)
8800
A
I
2tI2t capacity for fusing t
p=10ms, VRM=0.6VRRM, (note 5)
320×10
3
A
2s
I
2t
I
2t capacity for fusing t
p=10ms, VRM
≤10V, (note 5)
387×10
3
A
2s
Maximum rate of rise of on-state current (repetitive), (Note 6)
1000
A/s
diT/dt
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
1500
A/s
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
2
W
PGM
Peak forward gate power
30
W
VGD
Non-trigger gate voltage, (Note 7)
0.25
V
THS
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% VDRM, IFG=2A, tr
≤0.5s, Tcase=125°C.
7)
Rated VDRM.
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