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參數資料
| 型號： | R1LP0408CSB-5SI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit) |
| 中文描述： | 寬溫版本四米的SRAM（512 - KWord的】8位） |
| 文件頁數： | 5/14頁 |
| 文件大小： | 78K |
| 代理商： | R1LP0408CSB-5SI |
R1LP0408C-I Series
Rev.1.00, Aug.01.2003, page 5 of 13
Operation Table
WE#
CS#
OE#
Mode
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
I/O0 to I/O7
Ref. cycle
×
H
H
×
H
Not selected
High-Z
Read cycle
L
Output disable
High-Z
H
L
L
Read
Dout
L
L
H
Write
Din
Write cycle (1)
L
Note: H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
L
L
Write
Din
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
0.5 to +7.0
0.5*
0.7
40 to +85
65 to +150
40 to +85
V
1
to V
CC
+ 0.3*
2
V
W
°
C
°
C
°
C
Operating temperature
Storage temperature range
Tstg
Storage temperature range under bias
Notes: 1. V
T
min:
3.0 V for pulse half-width
≤
30 ns.
2. Maximum voltage is +7.0 V.
Tbias
DC Operating Conditions
(Ta =
40 to +85
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
V
SS
V
IH
V
IL
4.5
5.0
5.5
V
0
0
0
V
Input high voltage
2.2
0.3*
V
CC
+ 0.3
0.8
V
Input low voltage
Note: 1. V
IL
min:
3.0 V for pulse half-width
≤
30 ns.
1
V
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PDF描述 |
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| R1LP0408CSB-7LI | Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, ??5 %, ??200 ppm, .100 W |
| R1LP0408CSC-5SI | Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit) |
| R1LP0408CSC-7LI | Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit) |
| R1LP0408CSP-5SI | Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit) |
| R1LP0408CSP-7LI | Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| R1LP0408CSB-5SI#B0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM ASYNC SGL 5V 4MBIT 512KX8 55NS 32TSOP-II - Trays |
| R1LP0408CSB-5SI#D0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 55ns 32-Pin TSOP-II Tray 制造商:Renesas Electronics Corporation 功能描述:4MB, I-TEMP, 512KX8, 55NS, TSOP(II), BULK - Trays 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:R1LP0408C Series 4-Mbit (512 K x 8) 5 V 55 ns Advanced SRAM - TSOPII-32 制造商:Renesas 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 55ns 32-Pin TSOP-II Tray |
| R1LP0408CSB-5SI#S0 | 功能描述:IC SRAM 4MBIT 55NS 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| R1LP0408CSB-5SIBT | 制造商:Renesas Electronics Corporation 功能描述:Memory,Low-pwr SRAM,4M bit,x8, |
| R1LP0408CSB-7LC | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:4M SRAM (512-kword 】 8-bit) |
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