- 您現在的位置：買賣IC網 > PDF目錄374550 > R4177-01 (Hamamatsu Photonics) PHOTOMULTIPLIER TUBE PDF資料下載
參數資料
| 型號： | R4177-01 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | PHOTOMULTIPLIER TUBE |
| 中文描述： | 光電倍增管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 19K |
| 代理商： | R4177-01 |
GENERAL
Parameter
Description/Value
300 to 650
375
High temp. bialkali
10
Borosilicate glass
Linear focused
10
E678-13A (supplied)
Unit
nm
nm
—
mm dia.
—
—
—
—
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Suitable Socket
Material
Minimum Effective Area
Structure
Number of Stages
PHOTOMULTIPLIER TUBE
R4177-01
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1998 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Ruggedized, High Temperature (175
°
C) PMT for Oil Well Logging
13mm (1/2 Inch) Diameter, 10-Stage, Head-On Type
CHARACTERISTICS (at 25
°
C)
Parameter
Luminous (2856K)
Blue (CS 5-58 filter)
Luminous (2856K)
Min.
20
—
10
—
—
—
—
Unit
μ
A/lm
μ
A/lm-b
A/lm
—
nA
ns
ns
Value
1800
250
0.02
-80 to +175
Unit
Vdc
Vdc
mA
°
C
Supply Voltage
Average Anode Current
Ambient Temperature
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30min. storage in darkness)
Time Response
Anode Pulse Rise Time
Electron Transit Time
40
6
20
5
×
10
5
0.5 *
2
20
—
—
—
—
10
—
—
Typ.
Max.
Supply Voltage: 1500Vdc, K: Cathode, Dy: Dynode, P: Anode
* 1000nA at 175
°
C
Shock .................................................................................................. 100g's, 11
±
1ms, 3 impact shocks per direction (6 directions)
Vibration ................................................................................. Sine 20g's, 50 to 2000Hz, 1oct per minute, 1 sweep per axis (3 axes)
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Ratio
1
1
1
ENVIRONMENTAL TESTING
K
Dy1
Dy2
Dy3
Dy4
1
Dy5
1
Dy6
1
Dy7
1
Dy8
1
Dy9
1
1
1
Dy10
P
相關PDF資料 |
PDF描述 |
|---|---|
| R4210 | Silicon Power Rectifier |
| R42100 | Silicon Power Rectifier |
| R42120 | Silicon Power Rectifier |
| R42140 | Silicon Power Rectifier |
| R42160 | Silicon Power Rectifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| R417703118 | 功能描述:射頻無線雜項 ATT N 3DB 2GHZ 10W RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| R417703119 | 制造商:Radiall 功能描述:ATTENUATOR, N 3DB 1GHZ 100W - Bulk |
| R417703128 | 功能描述:衰減器 -互連 ATT N 3DB 2GHZ 80 /100W RoHS:否 制造商:Pomona Electronics 最大衰減: 容差: 頻率范圍:DC to 500 MHz 阻抗:50 Ohms 功率額定值:2 W 端接類型:Crimp 連接器類型:BNC Male / Female 工作溫度范圍:0 C to + 102 C |
| R417703129 | 制造商:Radiall 功能描述:ATTENUATOR, N 3DB 1GHZ 80/100W - Bulk |
| R417703138 | 功能描述:衰減器 -互連 ATT N 3DB 2GHZ 100W PAN RoHS:否 制造商:Pomona Electronics 最大衰減: 容差: 頻率范圍:DC to 500 MHz 阻抗:50 Ohms 功率額定值:2 W 端接類型:Crimp 連接器類型:BNC Male / Female 工作溫度范圍:0 C to + 102 C |
發布緊急采購，3分鐘左右您將得到回復。