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參數資料
型號: RA07H0608M
廠商: Mitsubishi Electric Corporation
英文描述: MITSUBISHI RF MOSFET MODULE
中文描述: 三菱射頻MOSFET模塊
文件頁數: 1/9頁
文件大小: 64K
代理商: RA07H0608M
MITSUBISHI RF MOSFET MODULE
R A 0 7 H 0 6 0 8 M
68-88MHz
7W
12.5V, 2 Stage Amp. For PORTABLE/MOBILE RADIO
RA07H0608M
MITSUBISHI ELECTRIC
1/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA07H0608M is a 7-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 68- to 88-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V
GG
=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>7W @ V
DD
=12.5V, V
GG
=5V, P
in
=30mW
η
T
>38% @ P
out
=7W (V
GG
control), V
DD
=12.5V, P
in
=30mW
Broadband Frequency Range: 68-88MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
Module Size: 30 x 10 x 5.4 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA07H0608M-E01
RA07H0608M-01
(Japan - packed without desiccator)
Antistatic tray,
25 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
PACKAGE CODE: H46S
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