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參數(shù)資料
| 型號： | RBV1001 |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | SILICON BRIDGE RECTIFIERS |
| 中文描述： | 硅橋式整流器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | RBV1001 |
RBV1000 - RBV1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
1000
50
RBV
1001
100
RBV
1002
200
RBV
1004
400
RBV
1006
600
RBV
1008
800
RBV
1010
1000
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 5.0 Amps.
Maximum DC Reverse Current Ta = 25
°
C
at Rated DC Blocking Voltage Ta = 100
°
C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
V
RRM
V
RMS
Volts
Volts
Volts
Amps.
35
70
140
280
420
560
700
V
DC
50
100
200
400
600
800
1000
I
F(AV)
10
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
300
Amps.
A
2
S
Volts
μ
A
μ
A
°
C/W
°
C
°
C
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998
RATING
RBV25
Dimensions in millimeters
C3
4.9
±
0.2
3.9
±
0.2
~
3.2
±
0.1
~
1
±
1
±
2
±
0.7
±
0.1
1.0
±
0.1
2.0
±
0.2
30
±
0.3
7.5
±
0.2
10
±
0.2
+
7.5
±
0.2
1
±
相關PDF資料 |
PDF描述 |
|---|---|
| RBV1001D | SILICON BRIDGE RECTIFIERS |
| RBV1002D | INDUCTOR/XFRMR 78.4UH 6 CONFIG |
| RBV1004D | SILICON BRIDGE RECTIFIERS |
| RBV1006D | SILICON BRIDGE RECTIFIERS |
| RBV1008D | SILICON BRIDGE RECTIFIERS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RBV1001D | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV1002 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV1002D | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV1002S | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Molding Single-Phase Bridge Rectifier |
| RBV1004 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
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