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參數(shù)資料
| 型號(hào)： | RBV1501D |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | SILICON BRIDGE RECTIFIERS |
| 中文描述： | 硅橋式整流器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 18K |
| 代理商： | RBV1501D |
RBV1500D - RBV1510D
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 15 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
1500D
RBV
1501D
RBV
1502D
RBV
1504D
RBV
1506D
RBV
1508D
RBV
1510D
UNIT
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc = 55
°
C
I
F(AV)
15
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
I
FSM
I
2
t
V
F
300
Amps.
A
2
S
Volts
Current Squared Time at t < 8.3 ms.
375
Maximum Forward Voltage per Diode at I
F
= 15 Amps.
1.0
Maximum DC Reverse Current Ta = 25
°
C
at Rated DC Blocking Voltage Ta = 100
°
C
I
R
10
μ
A
μ
A
°
C/W
°
C
°
C
I
R(H)
200
Typical Thermal Resistance (Note 1)
R
θ
JC
T
J
1.5
Operating Junction Temperature Range
- 40 to + 150
Storage Temperature Range
T
STG
- 40 to + 150
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998
RATING
RBV25
Dimensions in millimeters
C3
4.9
±
0.2
3.9
±
0.2
~
3.2
±
0.1
~
1
±
1
±
2
±
0.7
±
0.1
1.0
±
0.1
2.0
±
0.2
30
±
0.3
7.5
±
0.2
10
±
0.2
+
7.5
±
0.2
1
±
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RBV1502D | SILICON BRIDGE RECTIFIERS |
| RBV1504D | SILICON BRIDGE RECTIFIERS |
| RBV1506D | SILICON BRIDGE RECTIFIERS |
| RBV1508D | SILICON BRIDGE RECTIFIERS |
| RBV1510D | SILICON BRIDGE RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
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| RBV1502D | 制造商:EIC 制造商全稱(chēng):EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV1504 | 制造商:EIC 制造商全稱(chēng):EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV1504D | 制造商:EIC 制造商全稱(chēng):EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV1506 | 制造商:SYNSEMI 制造商全稱(chēng):SYNSEMI 功能描述:SILICON BRIDGE RECTIFIERS |
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