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參數資料
| 型號： | RBV806D |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | SILICON BRIDGE RECTIFIERS |
| 中文描述： | 硅橋式整流器 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | RBV806D |
RBV800D - RBV810D
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
SILICON BRIDGE RECTIFIERS
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
800D
50
RBV
801D
100
RBV
802D
200
RBV
804D
400
RBV
806D
600
RBV
808D
800
RBV
810D
1000
UNIT
Maximum Recurrent Peak Reverse Voltage
V
RRM
Volts
Maximum RMS Voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc = 55
°
C
I
F(AV)
8.0
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
I
FSM
I
2
t
V
F
300
Amps.
A
2
S
Volts
Current Squared Time at t < 8.3 ms.
166
Maximum Forward Voltage per Diode at I
F
= 8.0 Amps.
1.0
Maximum DC Reverse Current Ta = 25
°
C
at Rated DC Blocking Voltage Ta = 100
°
C
I
R
10
μ
A
μ
A
°
C/W
°
C/W
°
C
°
C
I
R(H)
200
Typical Thermal Resistance (Note 1)
R
θ
JC
R
θ
JA
T
J
2.2
Typical Thermal Resistance at Junction to Ambient
15
Operating Junction Temperature Range
- 40 to + 150
Storage Temperature Range
T
STG
- 40 to + 150
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.
UPDATE : AUGUST 3, 1998
RATING
RBV25
Dimensions in millimeters
C3
4.9 ± 0.2
3.9 ± 0.2
~
3.2 ± 0.1
~
1
1
2
0.7 ± 0.1
1.0 ± 0.1
2.0 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
+
7.5
±0.2
1
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PDF描述 |
|---|---|
| RBV810D | SILICON BRIDGE RECTIFIERS |
| RBV808D | SILICON BRIDGE RECTIFIERS |
| RBV800 | SILICON BRIDGE RECTIFIERS |
| RBV801 | SILICON BRIDGE RECTIFIERS |
| RBV802 | SILICON BRIDGE RECTIFIERS |
相關代理商/技術參數 |
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|---|---|
| RBV806S | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Molding Single-Phase Bridge Rectifier |
| RBV808 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV808D | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV810 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV810D | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
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