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參數資料
| 型號： | RC10S10G |
| 廠商： | Shanghai Sunrise Electronics Co., LTD. |
| 英文描述： | SILICON GPP CELL RECTIFIER |
| 中文描述： | 硅玻璃鈍化整流細胞 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 14K |
| 代理商： | RC10S10G |
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC10S01G THRU RC10S10G
SILICON GPP
CELL RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 10A
FEATURES
Glass passivated junction chip
High surge capability
Solderable electrode surfaces Ideal for hybrids
MECHANICAL DATA
Polarity: Bottom or upper electrode denotes
cathode according to the notice
in package
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load, derate
current by 20%)
SYMBOL
RC10S
01G
100
70
100
RC10S
02G
200
140
200
RC10S
04G
400
280
400
RC10S
06G
600
420
600
RC10S
08G
800
560
800
RC10S
10G
1000
700
1000
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
a
=55
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance
Typical Thermal Resistance
Storage and Operation Junction Temperature T
STG
,T
J
Note:
1. Measured at 1 MHz and applied voltage of 4.0V
dc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
V
RRM
V
RMS
V
DC
V
V
V
(Note 2)
T
a
=25
o
C
T
a
=150
o
C
(Note 1)
(Note 3)
μ
A
μ
A
pF
o
C/W
o
C
C
J
R
θ
(ja)
http://www.sse-diode.com
A
RATINGS
I
F(AV)
10
A
V
1
1.0
-50 to +150
300
I
R
10
300
V
F
I
FSM
400
TECHNICAL
SPECIFICATION
Dimensions in inches and (millimeters)
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