- 您現在的位置：買賣IC網 > PDF目錄374570 > RC28F128J3C-125 (Intel Corp.) Intel StrataFlash Memory (J3) PDF資料下載
參數資料
| 型號： | RC28F128J3C-125 |
| 廠商： | Intel Corp. |
| 英文描述： | Intel StrataFlash Memory (J3) |
| 中文描述： | 英特爾StrataFlash存儲器（J3） |
| 文件頁數： | 1/72頁 |
| 文件大小： | 905K |
| 代理商： | RC28F128J3C-125 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
Intel StrataFlash
Memory (J3)
256-Mbit (x8/x16)
Datasheet
Product Features
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash
Memory (J3)
device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-
Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-
per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed
interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future
devices.
Using the same NOR-based ETOX technology as Intel’s one-bit-per-cell products, the J3 device takes
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components
are ideal for code and data applications where high density and low cost are required. Examples include
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.
By applying FlashFile memory family pinouts, J3 memory components allow easy design migrations from
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash
memory (28F640J5 and 28F320J5) devices.
J3 memory components deliver a new generation of forward-compatible software support. By using the
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density
upgrades and optimized write capabilities of future Intel StrataFlash
memory devices. Manufactured on Intel
0.18 micron ETOX VII (J3C) and 0.25 micron ETOX VI (J3A) process technology, the J3 memory device
provides the highest levels of quality and reliability.
■
Performance
—110/115/120/150 ns Initial Access Speed
—125 ns Initial Access Speed (256 Mbit
density only)
—25 ns Asynchronous Page mode Reads
—30 ns Asynchronous Page mode Reads
(256Mbit density only)
—32-Byte Write Buffer
—6.8 μs per byte effective
programming time
■
Software
—Program and Erase suspend support
—Flash Data Integrator (FDI), Common
Flash Interface (CFI) Compatible
■
Security
—128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
—Absolute Protection with V
PEN
= GND
—Individual Block Locking
—Block Erase/Program Lockout during
Power Transitions
■
Architecture
—Multi-Level Cell Technology: High
Density at Low Cost
—High-Density Symmetrical 128-Kbyte
Blocks
—256 Mbit (256 Blocks) (0.18μm only)
—128 Mbit (128 Blocks)
—
6
4 Mbit (64 Blocks)
—32 Mbit (32 Blocks)
■
Quality and Reliability
—Operating Temperature:
-40 °C to +85 °C
—100K Minimum Erase Cycles per Block
—0.18 μm ETOX VII Process (J3C)
—0.25 μm ETOX VI Process (J3A)
■
Packaging and Voltage
—56-Lead TSOP Package
—64-Ball Intel
Easy BGA Package
—Lead-free packages available
—48-Ball Intel
VF BGA Package (32 and
64 Mbit) (x16 only)
—V
CC
=
2.7 V to 3.6 V
—V
CCQ
= 2.7 V to 3.6 V
Order Number: 290667-021
March 2005
Notice:
This document contains information on new products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
相關PDF資料 |
PDF描述 |
|---|---|
| RC28F128J3C-150 | Intel StrataFlash Memory (J3) |
| RC28F256J3A-120 | Intel StrataFlash Memory (J3) |
| RC28F256J3A-125 | Intel StrataFlash Memory (J3) |
| RC28F256J3A-150 | Intel StrataFlash Memory (J3) |
| RC28F256J3C-115 | Intel StrataFlash Memory (J3) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RC28F128J3C150 | 制造商:Intel 功能描述: |
| RC28F128J3C-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| RC28F128J3C150SL756 | 功能描述:IC FLASH 128MBIT 150NS 64BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| RC28F128J3D75 | 制造商:Intel 功能描述:MM#872765 FLASH 128M 3V SOLD->NUM |
| RC28F128J3D-75 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx? Embedded Flash Memory (J3 v. D) |
發布緊急采購，3分鐘左右您將得到回復。