欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào)： RC28F640J3A-120
廠商： INTEL CORP
元件分類： DRAM
英文描述： 3 Volt Intel StrataFlash Memory
中文描述： 4M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
封裝： BGA-64
文件頁(yè)數(shù)： 1/72頁(yè)
文件大小： 905K
代理商： RC28F640J3A-120
Intel StrataFlash
Memory (J3)
256-Mbit (x8/x16)
Datasheet
Product Features
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash
Memory (J3)
device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-
Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-
per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed
interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future
devices.
Using the same NOR-based ETOX technology as Intel’s one-bit-per-cell products, the J3 device takes
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components
are ideal for code and data applications where high density and low cost are required. Examples include
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.
By applying FlashFile memory family pinouts, J3 memory components allow easy design migrations from
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash
memory (28F640J5 and 28F320J5) devices.
J3 memory components deliver a new generation of forward-compatible software support. By using the
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density
upgrades and optimized write capabilities of future Intel StrataFlash
memory devices. Manufactured on Intel
0.18 micron ETOX VII (J3C) and 0.25 micron ETOX VI (J3A) process technology, the J3 memory device
provides the highest levels of quality and reliability.
■
Performance
—110/115/120/150 ns Initial Access Speed
—125 ns Initial Access Speed (256 Mbit
density only)
—25 ns Asynchronous Page mode Reads
—30 ns Asynchronous Page mode Reads
(256Mbit density only)
—32-Byte Write Buffer
—6.8 μs per byte effective
programming time
■
Software
—Program and Erase suspend support
—Flash Data Integrator (FDI), Common
Flash Interface (CFI) Compatible
■
Security
—128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
—Absolute Protection with V
PEN
= GND
—Individual Block Locking
—Block Erase/Program Lockout during
Power Transitions
■
Architecture
—Multi-Level Cell Technology: High
Density at Low Cost
—High-Density Symmetrical 128-Kbyte
Blocks
—256 Mbit (256 Blocks) (0.18μm only)
—128 Mbit (128 Blocks)
—
6
4 Mbit (64 Blocks)
—32 Mbit (32 Blocks)
■
Quality and Reliability
—Operating Temperature:
-40 °C to +85 °C
—100K Minimum Erase Cycles per Block
—0.18 μm ETOX VII Process (J3C)
—0.25 μm ETOX VI Process (J3A)
■
Packaging and Voltage
—56-Lead TSOP Package
—64-Ball Intel
Easy BGA Package
—Lead-free packages available
—48-Ball Intel
VF BGA Package (32 and
64 Mbit) (x16 only)
—V
CC
=
2.7 V to 3.6 V
—V
CCQ
= 2.7 V to 3.6 V
Order Number: 290667-021
March 2005
Notice:
This document contains information on new products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
相關(guān)PDF資料
PDF描述
RC28F640J3A-125 Intel StrataFlash Memory (J3)
RC28F640J3A-150 Intel StrataFlash Memory (J3)
RC28F640J3A-110 Intel StrataFlash Memory (J3)
RC28F640J3A-115 Intel StrataFlash Memory (J3)
RC28F256J3A-115 Intel StrataFlash Memory (J3)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RC28F640J3A-125 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
RC28F640J3A-150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
RC28F640J3C-110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
RC28F640J3C-115 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
RC28F640J3C115SL7H9 功能描述:IC FLASH 64MBIT 115NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) 其它名稱:497-5040
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*
主站蜘蛛池模板： 治县。| 靖宇县| 孟村| 万全县| 水富县| 廊坊市| 南开区| 会宁县| 安多县| 中江县| 湖南省| 南汇区| 子长县| 阿合奇县| 霍城县| 丰顺县| 奈曼旗| 毕节市| 额敏县| 辽阳县| 洪江市| 芦山县| 江城| 廊坊市| 赤城县| 陆川县| 中西区| 吉木萨尔县| 永丰县| 临邑县| 得荣县| 陆丰市| 闽侯县| 吉木萨尔县| 辽宁省| 芦溪县| 西宁市| 随州市| 文水县| 璧山县| 紫金县|