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參數資料
| 型號： | RC30S10G |
| 廠商： | Shanghai Sunrise Electronics Co., LTD. |
| 英文描述： | CA-BAYONET |
| 中文描述： | 硅玻璃鈍化整流細胞 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | RC30S10G |
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC30S01G THRU RC30S10G
SILICON GPP
CELL RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 30A
FEATURES
Glass passivated junction chip
High surge capability
Solderable electrode surfaces
Ideal for hybrids
MECHANICAL DATA
Polarity: Bottom or upper electrode denotes
cathode according to the notice
in package
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load, derate
current by 20%)
SYMBOL
RC30S
01G
100
70
100
RC30S
02G
200
140
200
RC30S
04G
400
280
400
RC30S
06G
600
420
600
RC30S
08G
800
560
800
RC30S
10G
1000
700
1000
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
a
=55
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance
Typical Thermal Resistance
Storage and Operation Junction Temperature
Note:
1. Measured at 1 MHz and applied voltage of 4.0V
dc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
V
RRM
V
RMS
V
DC
V
V
V
(Note 2)
T
a
=25
o
C
T
a
=150
o
C
(Note 1)
(Note 3)
μ
A
μ
A
pF
o
C/W
o
C
C
J
R
θ
(ja)
T
STG
,T
J
http://www.sse-diode.com
RATINGS
I
F(AV)
30
A
I
FSM
400
A
V
F
1.00
V
1
-50 to +150
I
R
10
750
300
TECHNICAL
SPECIFICATION
Dimensions in inches and (millimeters)
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