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參數(shù)資料
| 型號(hào)： | RD28F3208C3T70 |
| 廠商： | INTEL CORP |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA66 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66 |
| 文件頁(yè)數(shù)： | 1/70頁(yè) |
| 文件大小： | 1223K |
| 代理商： | RD28F3208C3T70 |
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3VoltIntel
Advanced+BootBlock
FlashMemory(C3)Stacked-ChipScale
PackageFamily
Datasheet
ProductFeatures
The3VoltIntel
Advanced+BootBlockFlashMemory(C3)Stacked-ChipScalePackage
(Stacked-CSP)devicedeliversafeature-richsolutionforlow-powerapplications.TheC3
Stacked-CSPmemorydeviceincorporatesflashmemoryandstaticRAMinonepackagewith
lowvoltagecapabilitytoachievethesmallestsystemmemorysolutionform-factortogetherwith
high-speed,low-poweroperations.TheC3Stacked-CSPmemorydeviceoffersaprotection
registerandflexibleblocklockingtoenablenextgenerationsecuritycapability.Combinedwith
theIntel
FlashDataIntegrator(Intel
FDI)software,theC3Stacked-CSPmemorydevice
providesacost-effective,flexible,codeplusdatastoragesolution.
■
FlashMemoryPlusSRAM
—ReducesMemoryBoardSpace
Required,SimplifyingPCBDesign
Complexity
■
Stacked-ChipScalePackage(Stacked-
CSP)Technology
—SmallestMemorySubsystemFootprint
—Area:8x10mmfor16Mbit(0.13μm)
Flash+2Mbitor4MbitSRAM
—Area:8x12mmfor32Mbit(0.13μm)
Flash+4Mbitor8MbitSRAM
—Height:1.20mmfor16Mbit(0.13μm)
Flash+2Mbitor4MbitSRAMand
32Mbit(0.13um)Flash+8MbitSRAM
—Height:1.40mmfor32Mbit(0.13μm)
Flash+4MbitSRAM
—ThisFamilyalsoincludes0.25μmand
0.18μmtechnologies
■
AdvancedSRAMTechnology
—70nsAccessTime
—LowPowerOperation
—LowVoltageDataRetentionMode
■
Intel
FlashDataIntegrator(FDI)
Software
—Real-TimeDataStorageandCode
ExecutionintheSameMemoryDevice
—FullFlashFileManagerCapability
■
Advanced+BootBlockFlashMemory
—70nsAccessTimeat2.7V
—Instant,IndividualBlockLocking
—128bitProtectionRegister
—12VProductionProgramming
—UltraFastProgramandEraseSuspend
—ExtendedTemperature–25°Cto+85°C
■
BlockingArchitecture
—BlockSizesforCode+DataStorage
—4-KwordParameterBlocks(fordata)
—64-KbyteMainBlocks(forcode)
—100,000EraseCyclesperBlock
■
LowPowerOperation
—AsyncReadCurrent:9mA(Flash)
—StandbyCurrent:7μA(Flash)
—AutomaticPowerSavingMode
■
FlashTechnologies
—0.25μmETOXVI,0.18μmETOX
VIIand0.13μmETOXVIIIFlash
Technologies
—28F160xC3,28F320xC3
252636-001
February,2003
Notice:
Thisdocumentcontainsinformationonnewproductsinproduction.Thespecifications
aresubjecttochangewithoutnotice.VerifywithyourlocalIntelsalesofficethatyouhavethelat-
estdatasheetbeforefinalizingadesign.
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| RD28F3204C3T70 | 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
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| RD28F1602C3TD70 | 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F1604C3TD70 | 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F1604C3B110 | 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RD28F3208C3T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F6408W30B70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| RD28F6408W30B85 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| RD28F6408W30T70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| RD28F6408W30T85 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
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