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參數資料
型號: RD3.3ESAB
元件分類: 參考電壓二極管
英文描述: 3.345 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
封裝: GLASS PACKAGE-2
文件頁數: 1/7頁
文件大?。?/td> 105K
代理商: RD3.3ESAB
400 mW DHD ZENER DIODE
(DO-34)
DESCRIPTION
NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34
Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)
construction having allowable power dissipation of 400 mW.
FEATURES
DO-34 Glass sealed package
This diode can be inserted into a PC board with a shorter pitch (5 mm)
Planar process
DHD (Double Heatsink Diode) construction
V
Z
Applied E24 standard
ORDERING INFORMATION
RD2.0ES to RD39ES with suffix "AB1", "AB2", or "AB3" should be applied
for orders for suffix "AB".
APPLICATIONS
Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Forward Current
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
I
F
P
P
RSM
T
j
T
stg
150 mA
400 mW
to see Fig. 6
to see Fig. 10
100 W (t = 10
μ
s)
175
°
C
–65 to +175
°
C
ZENER DIODES
RD2.0ES to RD39ES
Document No. D13935EJ7V0DS00 (7th edition)
Date Published April 2003 N CP(K)
Printed in Japan
DATA SHEET
0.4
Cathode
indication
2.0 MAX.
φ
2
2
2
DO-34 (JEDEC)
Marking color: Black
PACKAGE DIMENSIONS
(in millimeters)
φ
5 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
c
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相關代理商/技術參數
參數描述
RD33ES-AB1(AZ) 制造商:Renesas Electronics Corporation 功能描述:
RD33ES-AB3(AZ) 制造商:Renesas Electronics Corporation 功能描述:
RD33ES-AB4(AZ) 制造商:Renesas Electronics Corporation 功能描述:
RD33ES-AZ-AB2 制造商:Renesas Electronics Corporation 功能描述:
RD33E-T1 制造商:NEC Electronics Corporation 功能描述:32.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
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