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參數資料
| 型號： | RF1K49088 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET |
| 中文描述： | 3.5 A, 30 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數： | 1/7頁 |
| 文件大小： | 153K |
| 代理商： | RF1K49088 |
S E M I C O N D U C T O R
5-58
January 1997
RF1K49088
3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel
LittleFET Enhancement Mode Power MOSFET
Features
3.5A, 30V
r
DS(ON)
= 0.060
Temperature CompensatingPSPICE Model
On-Resistance vs Gate Drive Voltage Curves
Peak Current vs Pulse Width Curve
UIS Rating Curve
Description
The RF1K49088 Dual N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V - 5V range, thereby facilitating true on-off
power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49088.
Symbol
Packaging
JEDEC MS-012AA
LittleFET is a trademerk of Harris Corporation
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49088
MS-012AA
RF1K49088
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4908896.
G1(2)
D1(8)
D1(7)
S1(1)
D2(6)
D2(5)
S2(3)
G2(4)
BRANDING DASH
1
2
3
4
5
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
3952.4
相關PDF資料 |
PDF描述 |
|---|---|
| RF1K4909096 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 12V V(BR)DSS | 3.5A I(D) | SO |
| RF1K49090 | 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET⑩ Power MOSFET |
| RF1K49090 | Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應管) |
| RF1K4909296 | TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 12V V(BR)DSS | 3.5A I(D) | SO |
| RF1K49092 | 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1K4908896 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO |
| RF1K49090 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4909096 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49092 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4909296 | 功能描述:MOSFET USE 512-FDS9934C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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