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參數(shù)資料
| 型號： | RF1K49157 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 6.3 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | MS-012AA, 8 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 149K |
| 代理商： | RF1K49157 |
8-122
File Number
4012.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET is a trademark of Intersil Corporation. PSPICE is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RF1K49157
6.3A, 30V 0.030 Ohm, Single N-Channel
LittleFET Power MOSFET
This Single N-Channel power MOSFET is manufactured
using an advanced MegaFET process. This process, which
uses feature sizes approaching those of LSI integrated
circuits, gives optimum utilization of silicon, resulting in
outstanding performance. It was designed for use in
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
integrated circuits.
Formerly developmental type TA49157.
Features
6.3A, 30V
r
DS(ON)
= 0.030
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49157
MS-012AA
RF1K49157
NOTE: Whenordering,usetheentirepartnumber.Fororderingintape
and reel, add the suffix 96 to the part number, i.e., RF1K4915796.
SOURCE (2)
DRAIN (8)
NC (1)
DRAIN (7)
DRAIN (6)
DRAIN (5)
SOURCE (3)
GATE (4)
BRANDING DASH
1
2
3
4
5
Data Sheet
August 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1K49157 | 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET⑩ Enhancement Mode Power MOSFET |
| RF1K49211 | 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET⑩ Power MOSFET |
| RF1K49211 | 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET⑩ Power MOSFET |
| RF1K4921196 | TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 7A I(D) | SO |
| RF1K49221 | 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4915796 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49211 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4921196 | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49221 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4922196 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO |
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