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參數資料
| 型號： | RF1S50N06SM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數： | 1/8頁 |
| 文件大小： | 74K |
| 代理商： | RF1S50N06SM |
4-467
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG50N06, RFP50N06, RF1S50N06SM
50A, 60V 0.022 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Features
50A, 60V
r
DS(ON)
= 0.022
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06
TO-247
RFG50N06
RFP50N06
TO-220AB
RFP50N06
RF1S50N06SM
TO-263AB
F1S50N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.
G
D
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3575.4
相關PDF資料 |
PDF描述 |
|---|---|
| RF1S50N06SM | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| RF1S530SM | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs(14A, 100V, 0.160 Ohm,N溝道增強型功率MOS場效應管) |
| RF1S540SM | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強型功率MOS場效應管) |
| RF1S60P03SM | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場效應管) |
| RFP60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1S50N06SM9A | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S50N06SM9AS2551 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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