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參數資料
| 型號： | RF1S70N03SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 70 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 142K |
| 代理商： | RF1S70N03SM |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP70N03, RF1S70N03SM
70A, 30V 0.010 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49025.
Features
70A, 30V
r
DS(ON)
= 0.010
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve (Single Pulse)
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP70N03
TO-220AB
RFP70N03
RF1S70N03SM
TO-263AB
F1S70N03
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9Ato
obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A
D
G
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3404.4
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| RF1S70N03 | Monitor Shelf; External Height:15.72"; External Width:18.87"; External Depth:27.02"; Body Material:Steel; Color:Black; Leaded Process Compatible:No; Panel Width:19"; Peak Reflow Compatible (260 C):No; Enclosure Color:Black RoHS Compliant: No |
相關代理商/技術參數 |
參數描述 |
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| RF1S70N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S70N06SM | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9A | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9AR4570 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S70ND6SM9A | 制造商:Harris Corporation 功能描述: |
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