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參數資料
| 型號： | RF1S70N06SM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 588K |
| 代理商： | RF1S70N06SM |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1995
3-45
S E M I C O N D U C T O R
RFP70N03, RF1S70N03,
RF1S70N03SM
70A, 30V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
December 1995
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RFP70N03, RF1S70N03,
RF1S70N03SM
UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current
30
V
30
V
±
20
V
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Above T
C
= +25
o
C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
70
A
200
A
(Refer to UIS Curve)
150
W
1.0
W/
o
C
o
C
-55 to +175
Packages
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Symbol
DRAIN
(FLANGE)
GATE
SDRAIN
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
A
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
G
D
S
Features
70A, 30V
r
DS(ON)
= 0.010
Temperature CompensatingPSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve (Single Pulse)
+175
o
C Operating Temperature
Description
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Chan-
nel power MOSFETs are manufactured using the MegaFET
process. This process, which uses feature sizes approach-
ing those of LSI integrated circuits gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regula-
tors, switching converters, motor drivers, relay drivers and
emitter switches for bipolar transistors. These transistors
can be operated directly from integrated circuits.
Formerly developmental type TA49025.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFP70N03
TO-220AB
RFP70N03
RF1S70N03
TO-262AA
F1S70N03
RF1S70N03SM
TO-263AB
F1S70N03
NOTE: When ordering use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S70N03SM9A.
File Number
3404.2
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