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參數(shù)資料
| 型號： | RF2105LPCBA |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | HIGH POWER LINEAR UHF AMPLIFIER |
| 中文描述： | 超高頻大功率線性放大器 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 70K |
| 代理商： | RF2105LPCBA |
2-19
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
2
3
4
5
13
12
11
10
VCC3
VCC1
GND
PD
RF OUT
GND
RF OUT
RF OUT
6
7
8
9
1
14
15
16
R
G
N
N
V
N
N
R
BIAS
CIRCUIT
RF2105L
HIGH POWER LINEAR UHF AMPLIFIER
900 MHz ISM Band Applications
400 MHz Industrial Radios
Digital Communication Systems
Driver Stage for Higher Power Applications
Commercial and Consumer Systems
Portable Battery-Powered Equipment
The RF2105L is a high power, high efficiency linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital cellular phone transmitters or ISM
applications requiring linear amplification. It is packaged
in a 16-lead ceramic package with a backside ground.
The device is self-contained with the exception of the out-
put matching network and power supply feed line.
Single 2.7V to 6.5V Supply
Up to 1.2W CW Output Power
33dB Small Signal Gain
48% Efficiency
Digitally Controlled Power Down Mode
Small Package Outline (0.25" x 0.25")
RF2105L
RF2105L PCBA
High Power Linear UHF Amplifier
Fully Assembled Evaluation Board
2
Rev B3 010720
0.150
0.050
0.033
0.017
0.025
1
R0.008
0.050
0.075
0.065
0.080
0.080
0.258
0.242
0.258
0.022
0.018
0.208
Package S tyle: QLCC-16 Alumina
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