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2-33
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
RF1 IN
GND
GND
PD
RF2 IN
RF1 OUT
VCC1
RF2 OUT
RF2 OUT
GND
GND
GND
RF2 OUT
RF2 OUT
BIAS CIRCUIT
PA
PRE AMP
1
2
3
4
5
6
7
14
13
12
11
10
9
8
RF2114
ME DIUM POWER LINEAR AMPLIFIER
Digital Communication Systems
Spread-Spectrum Communication Systems
Driver for Higher Power Linear Applications
Portable Battery-Powered Equipment
Commercial and Consumer Systems
Base Station Equipment
The RF2114 is a medium to high power linear amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final linear
RF amplifier in UHF radio transmitters operating between
1MHz and 600MHz. It may also be used as a driver
amplifier in higher power applications. The device is self-
contained with the exception of the output matching net-
work, power supply feed line, and bypass capacitors. The
device can be used in 3-cell battery applications. The
maximum CW output at 3V is 125mW. The unit has a
total gain of 35dB, depending upon the output matching
network.
1MHz to 600MHz Operation
Over 800mW CW Output Power
35dB Small Signal Gain
Single 2.7V to 6.5V Supply
45% Efficiency
Digitally Controlled Power Down Mode
RF2114
RF2114 PCBA
Medium Power Linear Amplifier
Fully Assembled Evaluation Board
2
Rev A5 001222
0.156
0.148
0.059
0.057
0.252
0.236
0.010
0.004
.018
.014
8° MAX
0° MIN
0.0500
0.0164
0.010
0.007
0.347
0.339
0.050
Package Style: S OIC-14