- 您現在的位置：買賣IC網 > PDF目錄376306 > RF212-21 (Electronic Theatre Controls, Inc.) Image-Reject Front End for Dual or Tri-Band GSM Applications PDF資料下載
參數資料
| 型號： | RF212-21 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Image-Reject Front End for Dual or Tri-Band GSM Applications |
| 中文描述： | 鏡像抑制前端雙或三頻GSM應用 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 89K |
| 代理商： | RF212-21 |
RF212
Image-Reject Front End
2
May 24, 2000
Conexant
100780D
Proprietary Information and Specifications are Subject to Change
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
NC
GND
GND
LNA900IN
GAINSEL
LNA1800IN
GND
ENA
VCC
GND
STEPSEL
C067
IFOUT+
IFOUT-
GND
BANDSEL1
LOIN
LOGND
NC
VCC
VCC
Figure 3. RF212 Dual-Band Device Pin Configuration
20-Pin
ETSSOP
Technical Description
Both RF212 devices formfront ends of a dual-band or a tri-band
super-heterodyne receiver. The RF212 dual-band device is
optimzed for an EGSM900/DCS1800 design, while the RF212
tri-band device is suitable for EGSM900, DCS1800, and PCS
1900. Each frequency band has its own separate front-end
receiver path. Each receiver path contains an LNA, an image-
reject filter, and a mxer. The IF and LO ports are common to all
frequency bands. The image rejection achievable by this front-
end design without any additional external components is 35 dB
mnimumfor an IF of 400 MHz. Both devices operate over a
supply voltage range of 2.7 V to 3.6 V.
The RF212 dual-band device has one band selection pin
(BANDSEL1 on pin 14). When BANDSEL1 is set to logic “0,” the
EGSM900 receiver path is active. The LO frequency needs to
be higher than the RF input frequency (i.e., a high side injection
is used). When BANDSEL1 is set to logic “1,” the DCS1800
receiver path is active. The LO frequency needs to be less than
the RF input frequency (i.e., a low-side injection is used). With a
400 MHz IF, this arrangement allows a single, wide-range
Voltage Controlled Oscillator (VCO) to be used for each band of
operation.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
NC
GND
GND
LNA900IN
GAINSEL
LNA1800IN
LNA1900IN
ENA
VCC
GND
STEPSEL
C122
IFOUT+
IFOUT-
BANDSEL2
BANDSEL1
LOIN
LOGND
NC
VCC
VCC
Figure 4. RF212 Tri-Band Device Pin Configuration – 20-Pin
ETSSOP
Simlarly, the RF212 tri-band device has two band selection pins
(BANDSEL1 and BANDSEL2, pins 14 and 15, respectively). The
EGSM900 path uses the high side injection for the LO, while
DCS1800 and PCS1900 paths use the low side injection. Tables
1 and 2 provide the frequency band selection settings for the
dual and tri-band devices, respectively.
All the LNAs have switchable gain. The gain mode is selectable
using the GAINSEL signal (pin 7). Low gain mode is selected by
driving the GAINSEL signal to a logic “1”; high gain mode is
selected by driving the signal to a logic “0.” Depending on the
need of the handset design on the gain distribution, the gain
step between the high gain and low gain modes can be set to
either a 12 dB step or a 20 dB step. This gain step is selectable
with the STEPSEL signal (pin 18).
Electrical and Mechanical Specifications________________
The RF212 signal pin assignments and functional pin
descriptions are found in Table 3 (dual-band) and Table 4 (tri-
band). The absolute maximumratings of the RF212 are
provided in Table 5, the operating conditions are specified in
Table 6, and electrical specifications are provided in Table 7.
Figure 3 shows the diagramfor a typical application circuit using
the RF212 front end. Figure 4 provides the package dimensions
for both of the 20-pin ETSSOP devices.
ESD Sensitivity
The RF212 is a static-sensitive electronic device. Do not operate
or store near strong electrostatic fields. Take proper ESD
precautions.
相關PDF資料 |
PDF描述 |
|---|---|
| RFL6000 | MSM6150 CHIPSET SOLUTION |
| RFR6000 | MSM6150 CHIPSET SOLUTION |
| RFR6120 | MSM6150 CHIPSET SOLUTION |
| RFR6125 | MSM6150 CHIPSET SOLUTION |
| RFT6100 | MSM6150 CHIPSET SOLUTION |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF2123 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH PWOER AMPLIFIER |
| RF2123-000 | 功能描述:可復位保險絲 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| RF2123PCBA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH PWOER AMPLIFIER |
| RF2125 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH POWER LINEAR AMPLIFIER |
| RF2125P | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH POWER LINEAR AMPLIFIER |
發布緊急采購，3分鐘左右您將得到回復。