
2-99
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
PC
NC
VCC2
GND
GND
GND1
RF IN
VCC1
NC
RF OUT
RF OUT
GND
GND
RF OUT
RF OUT
NC
BIAS
RF2131
HIGH EF FICIENCY AMPS /ETACS AMPLIFIER
AMPS/ETACS Cellular Handsets
CDPD Portable Data Cards
900MHz ISM Band Equipment
Commercial and Consumer Systems
Portable Battery-Powered Equipment
The RF2131 is a high-power, high-efficiency amplifier IC.
The device is manufactured on an advanced Gallium Ars-
enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
AMPS and ETACS handheld equipment, spread spec-
trum systems, CDPD, and other applications in the
800MHz to 950MHz band. On-board power control pro-
vides over 30dB of control range with an analog voltage
input, and provides power down with a logic "low" for
standby operation. Although it is intended for class C
operation, linear class AB operation can be achieved by
raising the bias level. The device is self-contained with
50
input and the output can be easily matched to obtain
optimum power and efficiency characteristics.
Single 4.0V to 7.0V Supply
1.2W Output Power
25dB Gain With Analog Gain Control
64% Efficiency
Digitally Controlled Power Down Mode
800MHz to 950MHz Operation
RF2131
RF2131 PCBA
High Efficiency AMPS/ETACS Amplifier
Fully Assembled Evaluation Board
2
Rev B4 010417
0.035
0.016
0.010
0.008
8° MAX
0° MIN
0.021
0.014
0.392
0.386
0.158
0.150
0.244
0.230
0.069
0.064
0.050
0.060
0.054
-A-
0.009
0.004
Package S tyle: S tandard Batw ing