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參數資料
| 型號： | RF2138 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V GSM POWER AMPLIFIER |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | MP16K01A, 16 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 145K |
| 代理商： | RF2138 |
2-119
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
SeeUpgradedProductRF2173
1
2
3
4
5
13
12
11
10
9
GND2
RF IN
GND1
RF OUT
RF OUT
RF OUT
6
7
8
16
14
15
V
A
A
V
N
N
V
V
N
2
RF2138
3V GS M POWER AMPLIFIER
3V GSM Cellular Handsets
3V Dual-Band/Triple-Band Handsets
Commercial and Consumer Systems
Portable Battery-Powered Equipment
GPRS Compatible
The RF2138 is a high power, high efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in GSM hand held-digital cellular
equipment and other applications in the 800MHz to
950MHz band. On-board power control provides over
70dB of control range with an analog voltage input, and
provides power down with a logic “low” for standby opera-
tion. The device is self-contained with 50
input and the
output can be easily matched to obtain optimum power
and efficiency characteristics. The RF2138 can be used
together with the RF2140 for dual-band operation. The
device is packaged in an ultra-small ceramic package,
minimizing the required board space.
Single 2.7V to 4.8V Supply Voltage
+36dBm Output Power at 3.5V
32dB Gain with Analog Gain Control
58% Efficiency
800MHz to 950MHz Operation
Supports GSM and E-GSM
RF2138
RF2138 PCBA
3V GSM Power Amplifier
Fully Assembled Evaluation Board
2
Rev A9 011031
ALL SOLDER PAD TOLERANCES P0.05mm
1
4.20
3.50
3.35
sq.
0.38
1.50
1.20
2.00
0.28
0.13
0.80
1.50
sq.
0.40
sq.
Package S tyle: MP16K 01A
相關PDF資料 |
PDF描述 |
|---|---|
| RF2140 | 3V DCS POWER AMPLIFIER |
| RF2140PCBA | 3V DCS POWER AMPLIFIER |
| RF2145 | DCS1800/1900 POWER AMPLIFIER |
| RF2145PCBA | DCS1800/1900 POWER AMPLIFIER |
| RF2146 | PCS LINEAR POWER AMPLIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF2138PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V GSM POWER AMPLIFIER |
| RF2139-000 | 功能描述:可復位保險絲 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| RF2140 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V DCS POWER AMPLIFIER |
| RF2140-000 | 功能描述:可復位保險絲 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| RF2140PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V DCS POWER AMPLIFIER |
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