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參數(shù)資料
| 型號： | RF2162 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V 900MHZ LINEAR AMPLIFIER |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, LCC, QFN-16 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 218K |
| 代理商： | RF2162 |
2-205
2
P
Preliminary
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
G
V
V
V
2
16
1
13
14
15
GND
GND
RFIN
2
3
4
V
V
V
B
G
9
8
7
6
5
RF OUT
RF OUT
RF OUT
12
11
10
RF2162
3 V 900MHZ LINEAR AMPLIFIER
3V CDMA/AMPS Cellular Handsets
3V JCDMA/TACS Cellular Handsets
3V TDMA/AMPS Cellular Handsets
Spread-Spectrum Systems
CDPD Portable Data Cards
Portable Battery-Powered Equipment
The RF2162 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS hand-held digital cellular equipment,
spread-spectrum systems, and other applications in the
800MHz to 960MHz band. The RF2162 has an analog
bias control voltage to maximize efficiency. The device is
self-contained with 50
input and the output can be eas-
ily matched to obtain optimum power, efficiency, and lin-
earity characteristics. The device is packaged in a
compact 4mmx4mm, 16-pin, leadless chip carrier.
Single 3V Supply
29dBm Linear Output Power
29dB Linear Gain
35% Linear Efficiency
On-board Power Down Mode
800MHz to 960MHz Operation
RF2162
RF2162 PCBA
3V 900MHz Linear Amplifier
Fully Assembled Evaluation Board
2
Rev A17 011011
3.75
3.75
+
1.50 SQ
4.00
4.00
1
0.45
0.28
3.20
1.60
0.75
0.50
12°
INDEX AREA 3
1.00
0.90
0.75
0.65
0.05
0.00
NOTES:
5
Package Warpage: 0.05 max.
4
Pins 1 and 9 are fused.
Shaded Pin is Lead 1.
1
Dimension applies to plated terminal and is measured between
0.10 mm and 0.25 mm from terminal tip.
2
The terminal #1 identifier and terminal numbering convention
shall conform to JESD 95-1 SPP-012. Details of terminal #1
identifier are optional, but must be located within the zone
indicated. The identifier may be either a mold or marked
feature.
3
0.80
TYP
2
1
Dimensions in mm.
Package S tyle: LCC , 16-Pin, 4 x 4
相關(guān)PDF資料 |
PDF描述 |
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| RF2162PCBA | 3V 900MHZ LINEAR AMPLIFIER |
| RF2163PCBA | CAP 33UF 350V ELECT EB SMD |
| RF2163 | 3V, 2.5GHZ LINEAR POWER AMPLIFIER |
| RF2172PCBA-H | ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL |
| RF2172PCBA-L | ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF2162_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V 900MHz LINEAR AMPLIFIER |
| RF2162-000 | 功能描述:可復(fù)位保險絲 16V 2.6A-HD 100A MAX RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| RF2162PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V 900MHz LINEAR AMPLIFIER |
| RF2163 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V, 2.5GHZ LINEAR POWER AMPLIFIER |
| RF2163_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V, 2.5GHz LINEAR POWER AMPLIFIER |
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