
3-13
3
L
A
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
GND
GND
RF IN
NC
GND
GND
NC
NC
GND
GND
RF OUT
NC
GND
GND
NC
RF2317
LINEAR CAT V AMPLIFIER
CATV Distribution Amplifiers
Cable Modems
Broadband Gain Blocks
Laser Diode Driver
Return Channel Amplifier
Base Stations
The RF2317 is a general purpose, low-cost high-linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75
gain block. The gain flatness of
better than ±0.5dB from 50MHz to 1000MHz, and the
high linearity, make this part ideal for cable TV applica-
tions. Other applications include IF and RF amplification
in wireless voice and data communication products oper-
ating in frequency bands up to 3GHz. The device is self-
contained with 75
input and output impedances and
requires only two external DC biasing elements to oper-
ate as specified.
DC to 3.0GHz Operation
Internally Matched Input and Output
15dB Small Signal Gain
4.9dB Noise Figure
+26dBm Output Power
Single 9V to 12V Power Supply
RF2317
RF2317 PCBA
RF2317 PCBA
Linear CATV Amplifier
Fully Assembled Evaluation Board - 50
Fully Assembled Evaluation Board - 75
3
Rev A16 010816
0.068
0.064
0.020
0.014
0.034 REF
0.068
0.053
0.009
0.007
0.034
0.016
8° MAX
0° MIN
0.244
0.229
0.393
0.386
0.157
0.150
0.020
REF
0.008
0.004
-A-
Package S tyle: CJ 2BAT 0