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參數(shù)資料
| 型號(hào)： | RF2335 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | GENERAL PURPOSE AMPLIFIER |
| 中文描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | SOT-23, 5 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 40K |
| 代理商： | RF2335 |
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4-147
4
G
A
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
5
4
RF OUT
GND
GND
GND
RF IN
RF2335
GENER AL PUR POS E AMPLIFIER
Broadband, Low Noise Gain Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low Power Applications
Broadband Test Equipment
The RF2335 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50
input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2335 is avail-
able in a very small industry-standard SOT23 5-lead sur-
face mount package, enabling compact designs which
conserve board space.
DC to 6000MHz Operation
Internally matched Input and Output
12dB Small Signal Gain
+33dBm Output IP3
+17dBm Output Power
Good Gain Flatness
RF2335
RF2335 PCBA
General Purpose Amplifier
Fully Assembled Evaluation Board
4
Rev A4 001201
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3° MAX
0° MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package S tyle: S OT 5 Lead
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| RF2336PCBA | 制造商:RFMD 制造商全稱(chēng):RF Micro Devices 功能描述:GENERAL PURPOSE AMPLIFIER |
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