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參數資料
| 型號： | RF2376 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER |
| 中文描述： | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-23, 6 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 112K |
| 代理商： | RF2376 |
4-43
4
G
A
Preliminary
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
6
5
4
VCC
GND
RF IN
RF OUT
GND
GC
ATTEN
RF2376
CE LLULAR T DMA/CDMA LINE AR
VARIABLE GAIN AMPLIFIER
CDMA Cellular Handsets
TDMA Cellular Handsets
The RF2376 is a linear variable gain amplifier suitable for
use in TDMA and CDMA systems in the cellular band.
The features of this device include linear gain control,
high gain, and low noise figure. The IC is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (GaAs HBT) process and is featured in an
industry-standard miniature 6-lead plastic SOT package.
50dB Linear Gain Control Range
27dB Maximum Gain
Single 2.7V to 3.3V Supply
30mA Supply Current
High Linearity
7dB Noise Figure
RF2376
RF2376 PCBA
Cellular TDMA/CDMA Linear Variable Gain Amplifier
Fully Assembled Evaluation Board
4
Rev A2 010829
.90
.10 MAX
1.30
3.10
.37 MIN.
3.00
1.90
.25
.50
1.80
9°
1°
T
*When Pin 1 is in
upper left, text
reads downward
(as shown).
All dimensions in mm.
Package S tyle: S OT 23-6
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