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參數(shù)資料
| 型號： | RF3105 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V 900MHZ LINEAR AMPLIFIER MODULE |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 6 X 6 MM, LGM, 7 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 124K |
| 代理商： | RF3105 |
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2-253
2
P
Preliminary
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
3
VREG
2
RF IN
1
VCC1
6
RF OUT
7
GND
5
VCC2
4
V
RF3105
3V 900MHZ LINEAR AMPLIFIER MODULE
3V CDMA/AMPS Cellular Handsets
Spread-Spectrum Systems
The RF3105 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
824MHz to 849MHz band. The RF3105 has a digital bias
control voltage for low current in standby mode. The
device is self-contained with 50
input and output that is
matched to obtain optimum power, efficiency, and linear-
ity characteristics. The module is an ultra-small
6mmx6mm land grid array with backside ground.
Input/Output Internally Matched @ 50
Single 3V Supply
29dBm Linear Output Power
28dB Linear Gain
35% Linear Efficiency
RF3105
RF3105 PCBA
3V 900MHz Linear Amplifier Module
Fully Assembled Evaluation Board
2
Rev A1 001030
6.0 sq
0.100
3.000
4.390
0.600
0.800 sq
typ
NOTE:
Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package S tyle: LGM (6 mmx 6 mm)
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