
4-631
Product Description
Ordering Information
RF3805
RF3805PCBA-411 Fully Assembled Evaluation Board - 1625 to 1665
RF3805PCBA-412 Fully Assembled Evaluation Board - 1710 to 1785
RF3805PCBA-413 Fully Assembled Evaluation Board - DCS1800
RF3805PCBA-414 Fully Assembled Evaluation Board - PCS1900
RF3805PCBA-415 Fully Assembled Evaluation Board - UMTS2100
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
InGaP/HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
V_BIAS
VREF
VCC1
RF IN
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
1
2
3
4
8
7
6
5
PACKAGE BASE
GND
Bias
Circuit
RF3805
GaAs HBT PRE-DRIVER AMPLIFIER
GaAs HBT Pre-Driver for Basestation Amplifiers
Power Amplifier Stage for Commercial Wireless
Infrastructure
Class AB Operation for GSM/EDGE/
CDMA2000/W-CDMA Transmitter Applications
The RF3805 is specifically designed for wireless infra-
structure applications. Using a highly reliable GaAs HBT
fabrication process, this high-performance dual-stage
amplifier achieves high output power over a broad fre-
quency range. The RF3805 amplifier also provides excel-
lent efficiency and thermal stability through the use of a
thermally-enhanced surface-mount AlN package. Ease of
integration is accomplished through the incorporation of
an optimized evaluation board design provided to achieve
proper 50
operation. Various evaluation board configu-
rations are available to address a broad range of wireless
infrastructure applications:
GSM/EDGE1800
CDMA2000
W-CDMA
5W Output Power
High Linearity
40% Power-Added Efficiency
Thermally-Enhanced AlN Packaging
Broadband Platform Design Approach
GaAs HBT Pre-Driver Amplifier
0
Rev A1 040806
0.005 A
0.0025
0.024
-A-
0.156
0.025
R.008
0.028
TYP
0.020
7 PL
0.050
TYP
0.050
REF
0.0780
MAX
Dimensions in inches.
0.180
REF
0.198
0.200 REF
0.236
Shaded circle designates
pin 1 location.
Pin 1
Package Style: AlN
Proposed
9