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參數(shù)資料
| 型號： | RFD12N06RLESM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場效應管) |
| 中文描述： | 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 49K |
| 代理商： | RFD12N06RLESM |
6-12
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
12A, 60V 0.135 Ohm, N-Channel, Logic
Level, Power MOSFETs
These N-Channel logic level ESD protected power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor drivers,
relay drivers, and emitter switches for bipolar transistors.
This performance is accomplished through a special gate
oxide design which provides full rated conductance at gate
biases in the 3V to 5V range, thereby facilitating true on-off
power control directly from logic circuit supply voltages.
Formerly developmental type TA09861.
Features
12A, 60V
r
DS(ON)
= 0.135
Electrostatic Discharge Protected
UIS Rating Curve (Single Pulse)
Design Optimized for 5V Gate Drive
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD12N06RLE
TO-251AA
12N6LE
RFD12N06RLESM
TO-252AA
12N6LE
RFP12N06RLE
TO-220AB
12N06RLE
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in tape and reel, i.e., RFD12N06RLESM9A.
G
S
D
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURCE
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
July 1999
File Number
2407.4
Data Sheet
[ /Title
(RFD1
2N06R
LE,
RFD12
N06RL
ESM,
RFP12
N06RL
E)
/Sub-
ject
(12A,
60V,
0.135
Ohm,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
相關PDF資料 |
PDF描述 |
|---|---|
| RFP12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場效應管) |
| RFD14N05L | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場效應管) |
| RFD14N05LSM | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場效應管) |
| RFP14N05L | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場效應管) |
| RFD14N05L | MULTI DVI DAISY CHAINABLE RECEIVER - CATX |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RFD12N06RLESM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14LN05SM | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD14N05 | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14N05 | 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK |
| RFD14N05_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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