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參數資料
| 型號： | RFD16N06LE |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 16 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數： | 1/7頁 |
| 文件大小： | 342K |
| 代理商： | RFD16N06LE |
1
File Number
3628.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademgark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD16N06LE, RFD16N06LESM
16A, 60V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
a modern process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V to 5V range, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49027.
Features
16A, 60V
r
DS(ON)
= 0.047
Temperature Compensating PSPICE
Model
Can be Driven Directly from CMOS, NMOS, TTL
Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N06LE
TO-251AA
16N06L
RFD16N06LESM
TO-252AA
16N06LE
NOTE: When ordering, use the entire part number. Add suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e.,
RFD16N06LESM9A.
D
G
S
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet
October 1999
相關PDF資料 |
PDF描述 |
|---|---|
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM9A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-252AA |
| RFD3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
| RFP3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFD16N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W ;RoHS Compliant: Yes |
| RFD16N06LESM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N06SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-251AA |
| RFD16N10SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA |
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